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| SEMiX 503GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R)3s Trench IGBT Modules SEMiX 503GB126HDs Module Preliminary Data Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB 1 19-04-2007 SCH (c) by SEMIKRON SEMiX 503GB126HDs Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMiX(R)3s Trench IGBT Modules Module SEMiX 503GB126HDs Preliminary Data Features Temperature sensor Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Remarks This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 19-04-2007 SCH (c) by SEMIKRON SEMiX 503GB126HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 19-04-2007 SCH (c) by SEMIKRON SEMiX 503GB126HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 19-04-2007 SCH (c) by SEMIKRON SEMiX 503GB126HDs 5 19-04-2007 SCH (c) by SEMIKRON |
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